Electronic Characterization of Heteroepitaxial Silicon‐on‐Sapphire by Surface Photovoltage Spectroscopy

Abstract

Surface photovoltage spectroscopy was successfully applied to silicon-on-sapphire and it enables simultaneous determination of band structure, trap-ping centers, deep levels, the refractive index, and the film thickness. Studies of "as-grown" and ion-implanted films revealed a noticeable degree of amorphization manifested by 1.45 eV energy gap structure clearly re-solved in addition to standard 1.1 eV structure of bulk St. Three deep levels