Electric Field Profile and Charge Collection in a-Si:H Solar Cells

Abstract

The authors have studied the electric field profile in single-junction amorphous silicon solar cells. Their results allow an estimate of the space charge density at the p-i junction and a simple quantitative evaluation of the electrical properties of the junction. They find the field profile to be approximately exponential, and to be largely determined by deep defect states in the intrinsic a-Si:H absorber layer. (4 References).