Abstract
We analyze a simple model of a semiconductor containing only deep hole traps with a free-carrier generation rate proportional to the carrier concentrations. We show conclusively that trap filling can lead to an S-type negative differential conductance and current filamentation.
Cite
CITATION STYLE
APA
Adler, D., Shur, M. S., Silver, M., & Ovshinsky, S. R. (1984). Reply to “comment on ‘threshold switching in chalcogenide-glass thin films.’” Journal of Applied Physics, 56(2), 579–580. https://doi.org/10.1063/1.333920
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