Reply to "comment on 'threshold switching in chalcogenide-glass thin films'"

8Citations
Citations of this article
33Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

We analyze a simple model of a semiconductor containing only deep hole traps with a free-carrier generation rate proportional to the carrier concentrations. We show conclusively that trap filling can lead to an S-type negative differential conductance and current filamentation.

Cite

CITATION STYLE

APA

Adler, D., Shur, M. S., Silver, M., & Ovshinsky, S. R. (1984). Reply to “comment on ‘threshold switching in chalcogenide-glass thin films.’” Journal of Applied Physics, 56(2), 579–580. https://doi.org/10.1063/1.333920

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free