Raman Studies on Pre- and Post-Processed CVD Graphene Films Grown under Various Nitrogen Carrier Gas Flows

Abstract

In this work, graphene films were grown on copper substrates using chemical vapour deposition method under various N2 carrier flow rate. The samples were characterized using Raman spectroscopy. Three sets of Raman measurements have been performed: graphene/Cu (as-grown samples), pre-annealed graphene/glass, and post-annealed graphene/glass. It was found that the Raman spectra of graphene/Cu samples possessed a hump-shaped baseline, additionally higher signal-to-noise ratio (SNR) that leads to attenuation graphene-related bands. Significant improvement of SNR and flat baseline were observed for graphene films transferred on glass substrate. Further analysis on the remaining sets of Raman spectra highlighted minute traces of polymethyl methacrylate (PMMA) could yield misleading results. Hence, the set of Raman spectra on annealed graphene/glass samples would be suitable in further elucidating the effects of N2 carrier flow towards graphene growth. From there, higher N2 flow implied dilution of methanol/H2 mixture, limiting interactions between reactants and substrate. This leads to smaller crystallite size and lesser graphene layers.