TEM Characterization of Self-Organized (In,Ga)N Quantum Dots

Abstract

(In,Ga)N/GaN quantum structures were extensively investigated in cross section by transmission electron microscopy. Both strain-sensitive diffraction contrast imaging and high-angle annular dark-field imaging proved the formation of quantum dots. The quantum dots exhibit a homogeneous size distribution as well as a regular arrangement within the individual layers. High-angle annular dark-Field imaging was utilized to determine the thickness of the layers on the atomic scale.