We have fabricated and measured the performance of semiconducting YBaCuO thin-film thermometers on silicon for uncooled bolometric applications. Our YBaCuO thermometers have revealed a change in resistance with respect to temperature (dR/dT) as high as 8.2×103 Ω/K at T=294 K and the temperature coefficient of resistance as high as 3.1% K-1 over a 60 K range around room temperature which implies an excellent bolometric response. At 294 K the thermometers had a noise voltage of 0.75 μV/Hz 1/2 at the frequency of 30 Hz and the bias current of 1 μA. Using the data above, we calculated that semiconducting YBaCuO bolometers would have a responsivity of 5.5×104 V/W and a detectivity D* as high as 1.3×108 cm Hz1/2/W for 1 μA bias current if integrated with a typical thermal isolation structure. © 1995 American Institute of Physics.
CITATION STYLE
Shan, P. C., Çelik-Butler, Z., Butler, D. P., & Jahanzeb, A. (1995). Semiconducting YBaCuO thin films for uncooled infrared bolometers. Journal of Applied Physics, 78(12), 7334–7339. https://doi.org/10.1063/1.360382
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