Abstract
The electron irradiation effect on characteristics of the hydrogen sensors based on metal-insulator-semiconductor transistor structures has been investigated by experiment. The models of hydrogen and radiation sensitivity were developed. Using these models the forecast of functional performance of the hydrogen sensors under ionizing radiation and the estimation of critical doses has been done.
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Podlepetsky, B., & Samotaev, N. (2016). Hazardous gases sensing: Influence of ionizing radiation on hydrogen sensors. In Lecture Notes of the Institute for Computer Sciences, Social-Informatics and Telecommunications Engineering, LNICST (Vol. 170, pp. 217–222). Springer Verlag. https://doi.org/10.1007/978-3-319-47075-7_26
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