Functional Memristors: Optically Modulated Threshold Switching in Core–Shell Quantum Dot Based Memristive Device (Adv. Funct. Mater. 16/2020)

  • Wang J
  • Lv Z
  • Xing X
  • et al.
N/ACitations
Citations of this article
5Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

In article number 1909114, Ye Zhou, Su‐Ting Han, and co‐workers present a photonic memristor featuring UV‐sensitive quantum dot‐based switching media. The memristive device can be readily switched from the nonvolatile to volatile threshold regime via UV light, providing a noninvasive method for storing data in both a temporal and permanent manner in a single device.

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Cite

CITATION STYLE

APA

Wang, J., Lv, Z., Xing, X., Li, X., Wang, Y., Chen, M., … Han, S. (2020). Functional Memristors: Optically Modulated Threshold Switching in Core–Shell Quantum Dot Based Memristive Device (Adv. Funct. Mater. 16/2020). Advanced Functional Materials, 30(16). https://doi.org/10.1002/adfm.202070105

Readers over time

‘20‘22‘2402468

Readers' Seniority

Tooltip

PhD / Post grad / Masters / Doc 2

50%

Lecturer / Post doc 1

25%

Researcher 1

25%

Readers' Discipline

Tooltip

Engineering 1

33%

Psychology 1

33%

Materials Science 1

33%

Save time finding and organizing research with Mendeley

Sign up for free
0