Structural and optical characteristics of γ-in 2Se 3 nanorods grown on Si substrates

Abstract

This study attempted to grow single-phase -In2Se3 nanorods on Si (111) substrates by metal-organic chemical vapor deposition (MOCVD). High-resolution transmission electron microscopy (HRTEM) and selected area electron diffraction (SAED) confirmed that the In2Se3 nanorods are singularly crystallized in the phase. The photoluminescence of -In2Se3 nanorods at 15K was referred to as free and bound exciton emissions. The bandgap energy of -In2Se3 nanorods at room temperature was determined to be 1.99eV, obtained from optical absorption. Copyright © 2011 M. D. Yang et al.