Progress and applications of (Cu–)Ag–Bi–I semiconductors, and their derivatives, as next-generation lead-free materials for photovoltaics, detectors and memristors

  • Zhu H
  • Turkevych I
  • Lohan H
  • et al.
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Abstract

The search for efficient but inexpensive photovoltaics over the past decade has been disrupted by the advent of lead-halide perovskite solar cells. Despite impressive rises in performance, the toxicity and stability concerns of these materials have prompted a broad, interdisciplinary community across the world to search for lead-free and stable alternatives. A set of such materials that have recently gained attention are semiconductors in the CuI–AgI–BiI 3 phase space and their derivatives. These materials include ternary silver bismuth iodide compounds (Ag a Bi b I a +3 b ), ternary copper bismuth iodide Cu–Bi–I compounds and quaternary Cu–Ag–Bi–I materials, as well as analogues with Sb substituted into the Bi site and Br into the I site. These compounds are comprised of a cubic close-packed sub-lattice of I, with Ag and Bi occupying octahedral holes, while Cu occupies tetrahedral holes. The octahedral motifs adopted by these compounds are either spinel, CdCl 2 -type, or NaVO 2 -type. NaVO 2 -type Ag a Bi b I a +3 b compounds are also known as rudorffites. Many of these compounds have thus far demonstrated improved stability and reduced toxicity compared to halide perovskites, along with stable bandgaps in the 1.6–1.9 eV range, making them highly promising for energy harvesting and detection applications. This review begins by discussing the progress in the development of these semiconductors over the past few years, focusing on their optoelectronic properties and process–property–structure relationships. Next, we discuss the progress in developing Ag–Bi–I and Cu–Bi–I compounds for solar cells, indoor photovoltaics, photodetectors, radiation detectors and memristors. We conclude with a discussion of the critical fundamental questions that need to be addressed to push this area forward, and how the learnings from the wider metal-halide semiconductor field can inform future directions.

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Zhu, H., Turkevych, I., Lohan, H., Liu, P., Martin, R. W., Massabuau, F. C. P., & Hoye, R. L. Z. (2024). Progress and applications of (Cu–)Ag–Bi–I semiconductors, and their derivatives, as next-generation lead-free materials for photovoltaics, detectors and memristors. International Materials Reviews, 69(1), 19–62. https://doi.org/10.1177/09506608231213065

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