Modeling the effect of stochastic heating and surface chemistry in a pure CF4 inductively coupled plasma

  • Levko D
  • Shukla C
  • Raja L
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Abstract

The physics and chemistry of inductively coupled plasma generated in pure tetrafluoromethane are analyzed using a self-consistent two-dimensional plasma fluid model coupled with Maxwell's equations. The model also takes into account the stochastic electron heating typical for low-pressure inductive discharges. We show that this effect is important for the explanation of experimentally measured plasma parameters. We also analyze the influence of several model parameters on the plasma. These parameters include the mechanism of surface reactions, the sticking coefficient of fluorine atoms at the walls, the uncertainty in the electron impact dissociation reactions, and the background gas pressure.

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Levko, D., Shukla, C., & Raja, L. L. (2021). Modeling the effect of stochastic heating and surface chemistry in a pure CF4 inductively coupled plasma. Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, 39(6). https://doi.org/10.1116/6.0001293

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