Ii-vi narrow bandgap semiconductors: optoelectronics

Abstract

The main purpose of this chapter is to describe the applications and technology of II–VI narrow bandgap semiconductors, focussing on HgCdTe for infrared sensors. It provides a historical record of the development HgCdTe through photoconductors and photodiode arrays. The solid-state physics of HgCdTe is described to provide a foundation to explain the main crystal growth processes and device technologies. It concludes with a review of the research and development programs in centers around the world on third-generation infrared detector technology (so-called GEN III detectors). These include small pixel technology, higher operating temperature (HOThigher operating temperature (HOT)) device structures, two-color array technology, electron avalanche photodiodes (e-APDelectron avalanche photodiode (e-APD)s), multifunctional HgCdTe detectors, retina level processing, and future trends for HgCdTe infrared detector arrays.