Analysis of transient phenomena of C60 field effect transistors

Abstract

Transient current excited by application of step gate voltages was investigated for C60 field effect transistors (FETs). The measurements were continued during film growth and the decay curves were obtained as a function of C60 film thickness. The decay curve contains two different relaxation times. The fast decay could be explained in terms of channel resistance and gate insulator capacitance, while the slower decay relates with trapping processes of carriers. The slower decay observed for the larger mobility film implies that mobility is not an absolute figure for evaluating the performance of organic FETs. © 2006 American Institute of Physics.