GaAs-SiGe Based Novel Device Structure of Doping Less Tunnel FET

Abstract

Tunnel field effect transistors (TFETs) are a new approaching transistors with similarities of MOSFET. Tunnel FET (TFET) has believable usage in the forward generation ultra-low power applications as an alternative of the conventional FETs. In this paper, we have designed a state of the art device structure of hetero material based electrically doped TFET (EDTFET) for raising the DC/RF performance and reducing the ambipolarity. In this concern, high band gap material(GaAs) is used instead of silicon in drain-channel region and low band gap material (SiGe) in source region for reducing ambipolarity and improving RF performance which is not much significant. Therefore, for further betterment in device performance a live metal film is installed in source-channel interface with gate-underlapping as a proposed structure.