Since the availability of monochromators in transmission electron microscopes (TEMs), electron energy loss spectrometry (EELS) is widely used to determine band gaps and the dielectric properties of semiconductors on a nano-metre scale. Nevertheless, three physical effects hamper straightforward analysis: (a) relativistic energy losses, (b) the delocalization of the energy loss which is in the 10 nano-metreer range for valence losses, and (c) the presence of interface plasmons. When reducing the operation voltage of the TEM one can kill two birds with one stone: (a) the relativistic losses will disappear as soon as ve
CITATION STYLE
Stöger-Pollach, M., & Pongratz, P. (2010). Advantages of low beam energies in a TEM for valence EELS. In Journal of Physics: Conference Series (Vol. 209). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/209/1/012031
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