In this paper we demonstrate that by breaking the left/right symmetry in a bi-planar double-silicon on insulator (SOI) photonic crystal (PhC) fin-waveguide, we can couple the conventionally used transverse-electric (TE) polarized mode to the transverse-magnetic (TM) polarization slot-mode. Finite difference time domain (FDTD) simulations indicate that the TE mode couples to the robust TM mode inside the Brillouin zone. Broadband transmission data shows propagation identified with horizontal-slot TM mode within the TE bandgap for fully mismatched fabricated devices. This simultaneously demonstrates TE to TM mode conversion, and the narrowest Si photonics SiO2 slot-mode propagation reported in the literature (10 nm wide slot), which both have many potential telecommunication applications.
CITATION STYLE
Byers, J., Debnath, K., Arimoto, H., Husain, M. K., Sotto, M., Hillier, J., … Saito, S. (2021). 10 nm SiO2 TM Slot Mode in Laterally Mismatched Asymmetric Fin-Waveguides. Frontiers in Physics, 9. https://doi.org/10.3389/fphy.2021.659585
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