Mott-Hubbard localization in a model of the electronic subsystem of doped fullerides

Abstract

A microscopical model of doped fulleride electronic subsystem taking the triple orbital degeneracy of energy states into account is considered within the configurational-operator approach. Using the Green function method, the energy spectrum at the integer band filling n = 1 corresponding to AC60 compounds is calculated. A possible correlation-driven metal-insulator transition within the model is discussed. © 2012.