Influence of the rapid thermal annealing on the properties of a-C:H/c-Si structures

Abstract

The influence of rapid thermal annealing (RTA) on the properties of a-C: H/c-Si (p-type) structures was investigated. The carbon layers were deposited by plasma enhanced CVD at substrate temperature of 340°C from methanol (CH3OH) vapor. The C-V and I-V measurements of the a-C: H/Si structures showed that a p-n junction is formed on the silicon surface after RTA and the structures behave as a Schottky diode. The formation of a thin SiC interlayer by 1000 and 1200°C RTA was proven by the corresponding optical constants obtained from the ellipsometric measurements after RTA and subsequent carbon removal in HF acid. © 2008 IOP Publishing Ltd.