In Situ FT-IR Study of the Interfacial Oxide in the Anodic Dissolution of Silicon

Abstract

The anodic dissolution of silicon in fluoride electrolyte has been investigated by using in situ infrared spectroscopy in the difference mode. The interfacial oxide layer has been found to thicken with increasing potential. its thickness is little dependent upon electrolyte composition, but the oxide quality (defects, porosity), deduced From the shape of the nu SiO spectrum, depends upon both the potential and the electrolyte composition. The current oscillation, which may be observed in the far anodic range, is associated with an oscillation of the oxide thickness and quality.