Synthesis of ternary oxide Zn 2 GeO 4 nanowire networks and their deep ultraviolet detection properties

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Abstract

Ternary oxide Zn 2 GeO 4 with a wide bandgap of 4.84 eV, as a candidate for fourth generation semiconductors, has attracted a great deal of attention for deep ultraviolet (DUV) photodetector applications, because it is expected to be blind to the UV-A/B band (290-400 nm) and only responsive to the UV-C band (200-290 nm). Here, we report on the synthesis of Zn 2 GeO 4 nanowire (NW) networks by lower pressure chemical vapor deposition and investigate their corresponding DUV detection properties. We find that pure Zn 2 GeO 4 NWs could be obtained at a growth pressure of 1 kPa. The DUV detection tests reveal that growth pressure exerts a significant effect on DUV detection performance. The Zn 2 GeO 4 NW networks produced under 1 kPa show an excellent solar-blind photoresponsivity with fast rise and decay times (t rise ≈ 0.17 s and t decay ≈ 0.14 s).

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APA

Han, X., Feng, S., Zhao, Y., Li, L., Zhan, Z., Tao, Z., … Fu, D. (2019). Synthesis of ternary oxide Zn 2 GeO 4 nanowire networks and their deep ultraviolet detection properties. RSC Advances, 9(3), 1394–1402. https://doi.org/10.1039/c8ra09307e

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