Boron-doped homoepitaxial diamond (100) films with substantially flat surface have been deposited by a high-power microwave-plasma chemical-vapor-deposition (MPCVD) method. Hall mobilities of 1500 cm 2/V s at 290 K and 2220 cm2/V s at 235 K were attained for such a specimen with an acceptor density of 1.4 × 1018 cm -3 grown at a growth rate of 3.5 μm/h. These mobilities are comparable with those of the highest quality homoepitaxial diamond grown by a standard low-power MPCVD method, where the growth rate and carrier concentration were, respectively, ∼ 1/30 and 1/5 of the corresponding values attained in the present case. This fact verifies that the high-power MPCVD is suitable for deposition of a high quality and high carrier-concentration p-type diamond at a reasonably high growth rate. © 2004 American Institute of Physics.
CITATION STYLE
Teraji, T., Arima, K., Wada, H., & Ito, T. (2004). High-quality boron-doped homoepitaxial diamond grown by high-power microwave-plasma chemical-vapor deposition. Journal of Applied Physics, 96(10), 5906–5908. https://doi.org/10.1063/1.1805180
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