Abstract
Ti2MnZ (Z=Al, Ga, In) compounds with CuHg2Ti-type structure are predicted to have the different width of band gap in two spin channels and exhibit a nearly spin gapless semiconductivity. There are different origins of the band gap in spin-up and spin-down channels. The width of the band gap can be adjusted by changing the lattice parameter or doping congeners. These compounds are completely-compensated ferrimagnets with a zero magnetic moment. © 2014 Author(s).
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CITATION STYLE
Jia, H. Y., Dai, X. F., Wang, L. Y., Liu, R., Wang, X. T., Li, P. P., … Liu, G. D. (2014). Ti2Mn Z (Z =Al, Ga, In) compounds: Nearly spin gapless semiconductors. AIP Advances, 4(4). https://doi.org/10.1063/1.4871403
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