Emission Dependent on composition of Si-rich-SiNX Films obtained by PECVD

Abstract

Silicon-rich silicon nitride films with different stoichiometry were grown on silicon substrate using the plasma-enhanced chemical vapor deposition. The excess silicon content in the films was monitored via a variation of the NH3/SiH4 gas flow ratio from 0.45 up to 1.0. Morphology and luminescence properties of the films were studied by means of atomic force microscopy (AFM) and photoluminescence (PL) methods. High-temperature annealing was employed to produce the silicon nanocrystals in the films and to enhance the photoluminescence in the range of 1.6-3.0 eV. The PL spectrum was found to be complex due to the contribution of several radiative channels in emission process. It was determined that their competition leads to the non-monotonous variation of total PL peak position with the increase of the Si excess content. It was observed that the shape of PL spectra depends on an excitation wavelength. The ways to control the PL emission is proposed based on the discussion of the PL mechanism.