Tunneling FET fabrication and characterization

Abstract

Since the early demonstration of the conventional p + −i − n + Tunneling FETs (TFETs), various tunneling junction designs as well as the introduction of new material systems enabled the performance of TFETs to improve by orders of magnitude. Different properties and considerations of the material systems require well designed processes and novel processes rarely seen in the CMOS technology also emerged. The technology of TFET fabrication has been evolving dramatically ever since. This chapter introduces a number of techniques in the previous studies on the fabrication technology for the TFETs. In addition, some characterization methods on the fabricated devices are also discussed for more efficient diagnosis and optimization on the TFETs.