In this paper it is shown that InP solar cell is more radiation-resistant than Si and GaAs solar cells. 1 MeV electron irradiation damages in InP solar cells with AM 1.5 conversion efficiencies exceeding 16.5% are examined. Minority carrier diffusion length and carrier concentration studies for defects induced by 1 MeV electron irradiation in InP solar cells are carried out, and the correlation between the measured defect parameters and the performance characteristics of the electron-irradiated InP solar cells are elucidated. InP solar cells with higher carrier concentration substrate are found to be more radiation resistant, which is due to the superior radiation-resistance for the high carrier concentration InP substrate. © 1984 The Japan Society of Applied Physics.
CITATION STYLE
Missaoui, R., Abdessalem, T., & Latapy, M. (2017). Trends in Social Network Analysis. Trends in Social Network Analysis, 169–187. Retrieved from https://link.springer.com/chapter/10.1007/978-3-319-53420-6_7%0Ahttp://link.springer.com/10.1007/978-3-319-53420-6
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