An analytic expression of thermal diffusion coefficient for the hydrodynamic simulation of semiconductor devices

Abstract

A new analytical expression of thermal diffusion coefficient DT is derived. To the first-order approximation, it is given by (1+η)-1(D/Tn rather than (1-η)(D/Tn) where η=-(Tn/μ*)(∂μ*/∂Tn) and μ* represents the temperature-dependent bulk mobility. This new transport coefficient is implemented in our 2-D hydrodynamic device simulator and it seems to produce more reasonable results.