Extreme ultraviolet holographic lithography: Initial results

Abstract

The authors report the initial results from a holographic lithography technique using extreme ultraviolet (EUV) radiation. This approach removes the need for complex EUV reflective masks and optics, replacing them with a binary, nanopatterned transmission mask. Computer generated holograms were fabricated on 100 nm thick silicon nitride membranes with a 100 nm thick chromium absorber layer. Reconstructed images have been recorded in an 80 nm thick polymethylmetacrylate photoresist using 13 nm wavelength EUV radiation from an undulator source. The pattern was characterized by optical and atomic force microscopies, and compared with simulation results from the TOOLSET diffraction simulation program, yielding excellent agreement. © 2007 American Institute of Physics.