Luminescence properties of Si nanocrystals fabricated by ion beam sputtering and annealing

Abstract

During the past several decades, Si nanocrystals (NCs) have received remarkable attention in view of potential optoelectronic device applications. This paper summarizes recent progress in the study of luminescence from Si NCs, such as photoluminescence (PL), cathodoluminescence, time-solved PL, and electroluminescence. The paper is especially focused on Si NCs produced by ion beam sputtering deposition of SiO x single layer or SiO x /SiO 2 multilayers and subsequent annealing. The effects of stoichiometry (x) and thickness of Si O x layers on the luminescence are analyzed in detail and discussed based on possible mechanisms. © 2012 Sung Kim et al.