Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation

14Citations
Citations of this article
15Readers
Mendeley users who have this article in their library.

This article is free to access.

Abstract

A CdZnTe detector based on high-quality Cd0.9Zn0.1Te crystals was developed and tested as a monitor in high-intensity radiation fields. The current-voltage measurements were performed using thermally evaporated Au contacts deposited on the crystals, which revealed resistivity of 1010 Ω · cm. Typical leakage current for the planar devices was ∼3 nA for a field strength of 1000 V · cm-1. The test results show that the CdZnTe detector has a fast time response, with a rise time of approximately 2 ns, when exposed to transient and pulsed irradiation of X-rays or electron beams. The decay of current curves is observed and discussed according to charge carrier trapping effects and space-charge accumulation mechanisms. It is suggested that the current decreases quickly with strengthening of the electric field, possibly because of charge de-trapping. Copyright © 2012 Author(s).

Cite

CITATION STYLE

APA

Zhao, X. C., Ouyang, X. P., Xu, Y. D., Han, H. T., Zhang, Z. C., Wang, T., … Ouyang, X. (2012). Time response of Cd0.9Zn0.1Te crystals under transient and pulsed irradiation. AIP Advances, 2(1). https://doi.org/10.1063/1.3693970

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free