Silicon carbide (SiC) is a very promising material for semiconductor devices which have to work under extreme conditions, such as high temperature, high power, and high frequency. Because of the good thermal conductivity, the high radiation resistance, and the high breakdown voltage, SiC is well suited for demanding applications in harsh environments.
CITATION STYLE
Bechstedt, F., Furthmüller, J., Grossner, U., & Raffy, C. (2004). Zero- and Two-Dimensional Native Defects (pp. 3–25). https://doi.org/10.1007/978-3-642-18870-1_1
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