A MEMS-relay for make-break power switching applications

Abstract

This paper presents the design, modeling, fabrication and testing of a horizontal-displacement, electrostatically-actuated, MEMS relay for make-break power switching applications. The relay features {111}-plane silicon-etched electrical contacts. It is etched in (100) Si through a combination of KOH etching and DRIE, bonded to a glass substrate, and plated with a 10 μm thick copper, and a 2 μm thick palladium-cobalt film. Experimental relays exhibit a minimum total on-state contact resistance of 130 mΩ, a response time of 750 µs, a theoretical electrical isolation in excess of 1 kV (tested to 450 V with available equipment), and a current carrying capacity of 800 mA. They have been hot-switched in excess of 105 cycles without signs of performance degradation.