A silicon radio-frequency single electron transistor

65Citations
Citations of this article
108Readers
Mendeley users who have this article in their library.

Abstract

We report the demonstration of a silicon radio-frequency single electron transistor. The island is defined by electrostatically tunable tunnel barriers in a narrow channel field effect transistor. Charge sensitivities of better than 10 μeHz are demonstrated at megahertz bandwidth. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers. © 2008 American Institute of Physics.

Cite

CITATION STYLE

APA

Angus, S. J., Ferguson, A. J., Dzurak, A. S., & Clark, R. G. (2008). A silicon radio-frequency single electron transistor. Applied Physics Letters, 92(11). https://doi.org/10.1063/1.2831664

Register to see more suggestions

Mendeley helps you to discover research relevant for your work.

Already have an account?

Save time finding and organizing research with Mendeley

Sign up for free