We report the demonstration of a silicon radio-frequency single electron transistor. The island is defined by electrostatically tunable tunnel barriers in a narrow channel field effect transistor. Charge sensitivities of better than 10 μeHz are demonstrated at megahertz bandwidth. These results demonstrate that silicon may be used to fabricate fast, sensitive electrometers. © 2008 American Institute of Physics.
CITATION STYLE
Angus, S. J., Ferguson, A. J., Dzurak, A. S., & Clark, R. G. (2008). A silicon radio-frequency single electron transistor. Applied Physics Letters, 92(11). https://doi.org/10.1063/1.2831664
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