GaN power IC technology on p-GaN gate HEMT platform

Abstract

GaN power ICs provide an elegant solution for high-frequency power switching applications. This paper will first discuss the GaN power integration platform, which requires not only a high-voltage power switch, but also peripheral low-voltage transistors, diodes, resistors, capacitors, etc. The low-voltage components are preferably fabricated using the same process steps of the power switch to be cost-effective. As an example of a GaN power IC, an integrated gate driving circuit is demonstrated. By adopting a charge pump unit, the novel gate driver in this work enables rail-to-rail output voltage, fast switching speed and enhanced reliability. For the design of GaN power ICs, the unique device physics of GaN power devices should be carefully considered. The V th of the GaN power transistor is found to be bias-dependent and to exhibit dynamic behavior during power switching operation. The mechanism of this dynamic V th will be explained and its impact on circuit operation will be illustrated.