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Interface Related Radiative Recombination on a Type-II Broken-Gap Single GalnAsSb/InAs Heterojunction

  • Korolev K
  • Moiseev K
  • Berezovets V
  • et al.
Springer Berlin Heidelberg, (2007), 329-332
DOI: 10.1007/978-3-540-36588-4_75
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Korolev, K. A., Moiseev, K. D., Berezovets, V. A., Mikhailova, M. P., Yakovlev, Yu. P., Parfeniev, R. V., … McCombe, B. D. (2007). Interface Related Radiative Recombination on a Type-II Broken-Gap Single GalnAsSb/InAs Heterojunction. In Nonequilibrium Carrier Dynamics in Semiconductors (pp. 329–332). Springer Berlin Heidelberg. https://doi.org/10.1007/978-3-540-36588-4_75

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