Influence of Doping Concentrations on the Etching Rate of GaAs Studied by Atomic Force Microscopy

R. S. Freitas; B. R.A. Neves; J. F. Sampaio; M. S. Andrade; M. V.B. Moreira; W. N. Rodrigues

Conference Proceedings

Influence of Doping Concentrations on the Etching Rate of GaAs Studied by Atomic Force Microscopy

Freitas R
Neves B
Sampaio J
et al.

Scanning (1998) 20(3) 157-159

DOI: 10.1007/0-306-47095-0_15

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Freitas, R. S., Neves, B. R. A., Sampaio, J. F., Andrade, M. S., Moreira, M. V. B., & Rodrigues, W. N. (1998). Influence of Doping Concentrations on the Etching Rate of GaAs Studied by Atomic Force Microscopy. In Scanning (Vol. 20, pp. 157–159). https://doi.org/10.1007/0-306-47095-0_15

Influence of Doping Concentrations on the Etching Rate of GaAs Studied by Atomic Force Microscopy

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