Abstract
The fabrication of nanopores on GaN substrates using the simple and economical technique of microsphere lithography is demonstrated. A self-assembled hexagonal microsphere array formed oil GaN substrate acts as a hard-mask for the fabrication of nanostructures. In subsequent dry etch processes, arrays of holes in a nanostructure were formed on top of the LED. The structural properties of the nanopores are characterized by scanning electron microscopy (SEM), while photoluminescence (PL) measurements showed a 25% enhancement of light emission intensity, attributed to improved light extraction.
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CITATION STYLE
Ng, W. N., Hui, K. N., Wang, X. H., Leung, C. H., Lai, P. T., & Choi, H. W. (2008). Nanostructures on GaN by Microsphere Lithography. In Microscopy of Semiconducting Materials 2007 (pp. 81–84). Springer Netherlands. https://doi.org/10.1007/978-1-4020-8615-1_19
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