Gallium phosphide (GaP) is commercially one of the most important III–V semiconductors because of its application to electroluminescent devices. GaP is an indirect-band-gap semiconductor possessing the zinc-blende structure. A wide variety of theoretical and experimental works have given detailed information about the phySiCal properties of this materia
CITATION STYLE
Adachi, S. (1999). GALLIUM PHOSPHIDE (GaP). In Optical Constants of Crystalline and Amorphous Semiconductors (pp. 198–212). Springer US. https://doi.org/10.1007/978-1-4615-5247-5_21
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