The Physics of Bismide-Based Lasers

Abstract

In this chapter, we briefly review existing approaches for near- and mid-infrared lasers and show why III-V bismides are attractive as an alternative approach to conventional semiconductor material systems. We discuss a range of possibilities for practical applications for bismuth-containing semiconductor lasers that benefit from the additional flexible and effective control of energy bands and for the suppression of Auger recombination and inter-valence band absorption; the main processes limiting the performance of existing commercial lasers and responsible for significant energy usage. We discuss progress towards the final goal of temperature insensitive laser diodes and present a comprehensive set of data on the characterisation of GaAsBi lasers including optical gain and absorption characteristics and an assessment of the dominant carrier recombination processes in current state-of-the-art devices. We review the potential of GaAsBiN and InGaAsBi material systems for near- and mid-infrared photonic devices on GaAs and InP platforms, respectively, as well initial results on mid-infrared GaSbBi lasers grown on GaSb substrates.