Abstract
Main problems encountered in modelling of high power semiconductor devices are discussed in this paper. Unipolar and bipolar device properties are compared and the problems introduced by high time constant values related to carrier diffusion phenomena in the large base are explained. Traditional and novel concepts of power device modelling and simulation are presented. A new distributed model of power diode that can be integrated into a SPICE-based circuit simulator is described. Together with the existing power MOSFET macromodel, the presented approach can facilitate the design process of power electronic circuits. In the future, distributed models for IGBT and BJT will be added. © 2010 Springer Science+Business Media B.V.
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Napieralski, A., Napieralska, M., & Starzak, Ł. (2010). Power devices. In POWER/HVMOS Devices Compact Modeling (pp. 129–148). Springer Netherlands. https://doi.org/10.1007/978-90-481-3046-7_5
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