Formation of AlGaN and GaN epitaxial layer with high p-carrier concentration by pulse supply of source gases

Abstract

A drastic increase in the p-type carrier concentration and decrease in the activation energy of an acceptor are achieved by using a method of pulse supply of the source gases for AlGaN and GaN. This method offers a new way of producing a low-resistance p-AlGaN and p-GaN epitaxial layer. Copyright © 2012 Author(s).