Characterization of functionalized pentacene field-effect transistors and its logic gate application

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Abstract

Functionalized pentacene, 6,13-bis(tri-isopropylsilylethynyl)pentacene (TIPS-pentacene), field-effect transistors (FETs) were made by both thermal evaporation and solution deposition methods, and the mobility was measured as a function of temperature and intensity of incident illumination. The field-effect mobility (μ FET) has a gate-voltage dependent activation energy. A nonmonotonic temperature dependence was observed at high gate voltage (V G

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Park, J. G., Vasic, R., Brooks, J. S., & Anthony, J. E. (2006). Characterization of functionalized pentacene field-effect transistors and its logic gate application. Journal of Applied Physics, 100(4). https://doi.org/10.1063/1.2335378

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