Nanoscale characterization of stresses in semiconductor devices by quantitative electron diffraction

Abstract

By using transmission electron microscopy and focused ion beam technology in conjunction with finite element and electron diffraction contrast simulations, we have been able to quantitatively measure stresses in semiconductor devices with a spatial resolution on the order of tens of nanometers and a sensitivity on the order of tens of mega pascals. Examples of measuring stresses around shallow isolation trenches in semiconductor device structures are presented. © 2000 American Institute of Physics.