Historical Perspectives of Silicon Oxidation

Abstract

Thermal silicon dioxide has been a critical part of siliconsemiconductor technology since the late 1950's. In 1965,oxidation kinetics were characterized by the linear-parabolicexpression for both dry oxygen and steam over a wide range ofprocess variables. Since then, numerous attempts have been madeto model the dry 02 oxidation process in the 0-30 nm thicknessrange where data have indicated a departure from the linearparabolicrelationship. These and other historical trends arereviewed, with emphasis being placed on the factors and processvariables which affect oxidation kinetics and associated oxideproperties. Future device directions and correspondingrequirements for thermal oxides are also reviewed