Microwave-Assisted Synthesis of Bi2S3and Sb2S3Nanoparticles and Their Photoelectrochemical Properties

Abstract

Bi2S3 and Sb2S3 nanoparticles were prepared by microwave irradiation of single-source precursor complexes in the presence of ethylene glycol as a coordinating solvent. The as-synthesized nanoparticles were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), scanning electron microscopy (SEM) coupled with energy-dispersive X-ray (EDX), photoluminescence (PL), and UV-vis near-infrared (NIR) spectroscopy. Their electrochemical potential was examined in [Fe(CN)]4-/[Fe(CN)]3- by cyclic and square wave voltammetry (CV and SWV) and electrochemical impedance spectroscopy (EIS). GCEBi2S3 and GCESb2S3 exhibit promising electrochemical performance and a higher specific capacitance of about 700-800 F/g in [Fe(CN)]4-/[Fe(CN)]3. Thin films of Bi2S3 and Sb2S3 were successfully incorporated in the fabrication of solar cell devices. The fabricated device using Bi2S3 (under 100 mW/cm2) showed a power conversion efficiency (PCE) of 0.39%, with a Voc of 0.96 V, a Jsc of 0.00228 mA/cm2, and an FF of 44%. In addition, the device exhibits nonlinear current density-voltage characteristics, indicating that Bi2S3 was experiencing a Schottky contact. The Sb2S3-based solar cell device showed no connection in the dark and under illumination. Therefore, no efficiency was recorded for the device using Sb2S3, which indicated the ohmic nature of the film. This might be due to the current leakage caused by poor coverage. The nanoparticles were found to induce similar responses to the conventional semiconductor nanomaterials in relation to photoelectrochemistry. The present study indicates that Bi2S3 and Sb2S3 nanoparticles are promising semiconductor materials for developing optoelectronic and electrochemical devices as the films experience Schottky and Ohmic contacts.