Abstract
Plasmonic terahertz detection in a dual-grating-gate field-effect transistor structure with an asymmetric unit cell is studied theoretically and modeled numerically. It is shown that DC bias current flowing in the structure channel strongly affects the detector responsivity. © Published under licence by IOP Publishing Ltd.
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CITATION STYLE
APA
Fateev, D. V., Popov, V. V., & Nikitov, S. A. (2014). Theory of plasmonic terahertz detection by a dual-grating-gate field-effect transistor. In Journal of Physics: Conference Series (Vol. 486). Institute of Physics Publishing. https://doi.org/10.1088/1742-6596/486/1/012022
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