Electrical Characterization of Silicon-on-Insulator Materials and Devices

Abstract

Electrical Characterization of Silicon-on-Insulator Materials and Devices describes a wide variety of electrical characterization methods, from wafer screening and defect identification to detailed device evaluation. Each technique comes with pertinent technical information -- experimental set-up, basic models, parameter extraction -- that can be immediately useful to the reader. Electrical Characterization of Silicon-on-Insulator Materials and Devices provides a comprehensive and accessible treatment of all aspects of the latest SOI technologies, including material synthesis, device physics, characterization, circuit applications, and reliability issues. Both the academic researchers and engineers working on the SOI technology will find this book invaluable as a source of pertinent scientific information, practical details, and references. For people planning to enter the SOI field, this book offers a unique coverage of the SOI technology and an attractive presentation of the underlying concepts. This book may also be used as a graduate level textbook for students who wish to learn more about the physics, applications, and electrical characterization of SOI devices. Preface -- 1 Introduction -- 1.1 Why SOI? -- 1.2 Why Not Yet SOI? -- 1.3 Why an SOI Book? -- 2 Methods of Forming SOI Wafers -- 2.1 SIMOX -- 2.2 Wafer Bonding -- 2.3 Zone-Melting Recrystallization -- 2.4 Epitaxial Lateral Overgrowth -- 2.5 Full Isolation by Porous Oxidized Silicon -- 2.6 Silicon on Sapphire -- 2.7 Silicon on Zirconia -- 3 SOI Devices -- 3.1 Advanced CMOS and Bipolar Devices -- 3.2 Radiation-Hardened Circuits -- 3.3 High-Voltage Devices -- 3.4 High-Temperature Devices -- 3.5 Low-Power Applications -- 3.6 Three-Dimensional Devices -- 3.7 Transducers -- 3.8 Innovative Devices -- 4 Wafer-Screening Techniques -- 4.1 The Basis for Wafer Screening -- 4.2 Surface Photovoltage -- 4.3 Dual-Beam S-Polarized Reflectance -- 4.4 Dual-Beam Optical Modulation -- 4.5 Other Optical Methods -- 4.6 Point Contact Pseudo-MOS Transistor -- 4.7 Quick-Turnaround Capacitance -- 4.8 Pinhole Detection -- 4.9 Conclusion -- 5 Transport Measurements -- 5.1 Four-Point Probe -- 5.2 Spreading Resistance -- 5.3 Hall Effect and Magnetoresistance -- 5.4 Van der Pauw Measurements -- 5.5 Photoconductivity -- 5.6 PICTS -- 6 SIS Capacitor-Based Characterization Techniques -- 6.1 Capacitance and Conductance Techniques -- 6.2 Bias-Scan DLTS Technique -- 6.4 Zerbst Method and Generation Lifetime -- 6.5 MOS Capacitance Method -- 7 Diode Measurements -- 7.1 CurrentVoltage Measurements in a PN Diode -- 7.2 Differential Current/Capacitance Method -- 7.3 Gated-Diode Measurements -- 7.4 Deep-Level Transient Spectroscopy -- 8 Electrical Characterization of SOI Materials and Devices MOS Transistor Characteristics -- 9 Transistor-Based Characterization Techniques -- List of Symbols.