We report an on-chip, electrically detected ferromagnetic resonance study on microbars made from GaAs/Fe(1 nm)/GaAs layers. Our experiments, performed at several different microwave frequencies and static magnetic field directions, enable us to observe a strong in-plane uniaxial anisotropy of the linewidth. We attribute the linewidth anisotropy to the two magnon scattering process, supporting this by calculations of possible linewidth broadening mechanisms. Our findings are useful for designing future high-performance spintronic devices based on nanoscale magnetic structures. © 2013 American Institute of Physics.
CITATION STYLE
Kurebayashi, H., Skinner, T. D., Khazen, K., Olejník, K., Fang, D., Ciccarelli, C., … Ferguson, A. J. (2013). Uniaxial anisotropy of two-magnon scattering in an ultrathin epitaxial Fe layer on GaAs. Applied Physics Letters, 102(6). https://doi.org/10.1063/1.4792269
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