ION-Sensitive field effect transistor sensors using suspended graphene nanoribbon patterned by shrink lithography

Abstract

Low-cost and facile shrink lithography derived graphene nanoribbon (GNR) was suspended on the channel to form an ion-sensitive field effect transistor (ISFET), and its pH sensing application is presented. By combining a thermoplastic film with a molding process, GNR patterns 50 nm wide were achieved in a low-cost and simple way. Ambipolar characteristics of annealed suspended GNR ISFET present an enhanced ambipolar effect. In comparison, unsuspended GNR and microscale graphene sheets based ISFETs were characterized under the same design, fabrication, and measurement conditions, showing that the suspended GNR ISFET is superior in sensitivity and detection limits.