Multiband quantum transport models for semiconductor devices

Abstract

The modeling of semiconductor devices, which is a very active and intense field of research, has to keep up with the speed at which the fabrication technology proceeds; the devices of the last generations have become increasingly smaller, reaching a size so small that quantum effects dominate their behaviour. Quantum effects such as resonant tunneling and other size-quantized effects cannot be described by classical or semiclassical theories; they need a full quantum description [Fre90, JAC92, KKFR89, MRS90, RBJ91, RBJ92]. A very important feature, which has appeared in the devices of the last generation and which requires a full quantum treatment, is the presence of the interband current: a contribution to the total current which arises from transitions between the conduction and the valence band states. Resonant interband tunneling diodes (RITDs) are examples of semiconductor devices which exploit this phenomenon; they are of big importance in nanotechnology for their applications to high-speed and miniaturized systems [YSDX91, SX89]. In the band diagram structure of these diodes there is a small region where the valence band edge lies above the conduction band edge (valence quantum well), making interband resonance possible.