An idealized bipolar host material and dopant are synthesized for deep-red phosphorescent organic light-emitting diodes (PhOLEDs). The host material exhibits a low-lying lowest unoccupied molecular orbital and high thermal and morphological stability, while the dopant emits sharply at 616 nm with a full width at half-maximum of only 39 nm. The new host/guest combination for the deep-red device yields the highest device efficiencies to date. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
CITATION STYLE
Fan, C. H., Sun, P., Su, T. H., & Cheng, C. H. (2011). Host and dopant materials for idealized deep-red organic electrophosphorescence devices. Advanced Materials, 23(26), 2981–2985. https://doi.org/10.1002/adma.201100610
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